Jin Rao

According to our database, Jin Rao authored at least 1 paper in 2025.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2025

Al2O3/AlN/GaN MOS-HEMTs on 6-inch silicon substrate with high transconductance and state-of-the-art fmax × LG.

Lingjie Qin, Jiejie Zhu, Bowen Zhang, Yuxi Zhou, Huantao Duan, Huimei Ma, Mengdi Li, Simei Huang, Jin Rao, Xiaohua Ma, Yue Hao

Sci. China Inf. Sci., 2025