Jisheng Han

According to our database, Jisheng Han authored at least 3 papers between 2016 and 2025.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2025

Temperature dependence of dynamic performance of SiC MOSFETs in a half-bridge configuration.

Tianlu Wang, Yu Zhong, Lan Luo, Fanpeng Zeng, Ziang Zhao, Yingxin Cui, Mingsheng Xu, Xiangang Xu, Handoko Linewih, Jisheng Han

Microelectron. J., 2025

Simulation and fabrication of 4H-SiC SBD with main P-epilayer island termination.

Xinyu Wang, Dengwen Yuan, Shicheng Zhu, Xiyao Huang, Yaxin Li, Lei Ge, Yingxin Cui, Mingsheng Xu, Yu Zhong, Xiaobo Hu, Kuan Yew Cheong, Xiangang Xu, Jisheng Han

Microelectron. J., 2025

2016

Active defects in MOS devices on 4H-SiC: A critical review.

Hamid Amini Moghadam, Sima Dimitrijev, Jisheng Han, Daniel Haasmann

Microelectron. Reliab., 2016