Sima Dimitrijev

Orcid: 0000-0002-4514-0336

According to our database1, Sima Dimitrijev authored at least 22 papers between 2001 and 2023.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of five.

Timeline

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Bibliography

2023
Circuit-Specific and Technology-Independent Criterion for Selection of Power MOSFETs That Minimize Energy Dissipation.
IEEE Access, 2023

2021
Fast Near-Interface Traps in 4H-SiC MOS Capacitors Measured by an Integrated-Charge Method.
IEEE Access, 2021

2020
Measurement of Power Dissipation Due to Parasitic Capacitances of Power MOSFETs.
IEEE Access, 2020

The Correct Equation for the Current Through Voltage-Dependent Capacitors.
IEEE Access, 2020

2018
Analysis of Flat-Band-Voltage Dependent Breakdown Voltage for 10 nm Double Gate MOSFET.
J. Inform. and Commun. Convergence Engineering, 2018

2017
Recognizing isolated words with minimum distance similarity metric padding.
J. Intell. Fuzzy Syst., 2017

2016
Active defects in MOS devices on 4H-SiC: A critical review.
Microelectron. Reliab., 2016

2012
Ranked selection of nearest discriminating features.
Hum. centric Comput. Inf. Sci., 2012

Examplers based image fusion features for face recognition
CoRR, 2012

Feature selection using nearest attributes
CoRR, 2012

Cognitive Memory Network
CoRR, 2012

Nearest Neighbor Classifier Based on Nearest Feature Decisions.
Comput. J., 2012

2010
Inter-image outliers and their application to image classification.
Pattern Recognit., 2010

Role of Resolution in Noisy Pattern Matching.
Proceedings of the Information Processing and Management, 2010

2008
Face Recognition Using Local Binary Decisions.
IEEE Signal Process. Lett., 2008

2005
Effects of electrical stressing in power VDMOSFETs.
Microelectron. Reliab., 2005

a-Si: H Photodiode Using Alumina Thin Film Barrier.
J. Inform. and Commun. Convergence Engineering, 2005

2003
Channel-carrier mobility parameters for 4H SiC MOSFETs.
Microelectron. Reliab., 2003

Advances in SiC power MOSFET technology.
Microelectron. Reliab., 2003

2002
Effects of high electric field and elevated-temperature bias stressing on radiation response in power VDMOSFETs.
Microelectron. Reliab., 2002

Mechanisms of spontaneous recovery in positive gate bias stressed power VDMOSFETs.
Microelectron. Reliab., 2002

2001
Mechanisms of positive gate bias stress induced instabilities in power VDMOSFETs.
Microelectron. Reliab., 2001


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