John A. Ott

According to our database1, John A. Ott authored at least 1 paper in 2015.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Links

On csauthors.net:

Bibliography

2015
High-mobility high-Ge-content Si1-xGex-OI PMOS FinFETs with fins formed using 3D germanium condensation with Ge fraction up to x∼ 0.7, scaled EOT∼8.5Å and ∼10nm fin width.
Proceedings of the Symposium on VLSI Circuits, 2015


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