Jounghun Park

According to our database, Jounghun Park authored at least 3 papers between 2021 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2023

Decomposition of Vertical and Lateral Charge Loss in Long-term Retention of 3-D NAND Flash Memory.

Jounghun Park, Gilsang Yoon, Donghyun Go, Donghwi Kim, Ukju An, Jongwoo Kim, Jungsik Kim, Jeong-Soo Lee

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

Impact of P/E Stress on Trap Profiles in Bandgap-Engineered Tunneling Oxide of 3D NAND Flash Memory.

Gilsang Yoon, Donghyun Go, Jounghun Park, Donghwi Kim, Jungsik Kim, Jeong-Soo Lee

IEEE Access, 2022

2021

Extraction of Nitride Trap Profile in 3-D NAND Flash Memory Using Intercell Program Pattern.

Jounghun Park, Gilsang Yoon, Donghyun Go, Jungsik Kim, Jeong-Soo Lee

IEEE Access, 2021