Kaibing Qiu

According to our database, Kaibing Qiu authored at least 1 paper in 2021.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2021

The Effect of High Temperature Ion Implantation on the Performance of 1.2kV 4H-SiC MOSFETs.

Hao Liu, Liang Tian, Kaibing Qiu, Jun Shi, Longxin Shi

Proceedings of the 2021 IEEE International Conference on Integrated Circuits, 2021