L. Arivazhagan

According to our database, L. Arivazhagan authored at least 3 papers between 2019 and 2021.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2021

Current collapse degradation in GaN High Electron Mobility Transistor by virtual gate.

D. Godfrey, D. Nirmal, L. Arivazhagan, D. Godwinraj, N. Mohan Kumar, Yulin Chen, Wenkuan Yeh

Microelectron. J., 2021

Nanosheet field effect transistors-A next generation device to keep Moore's law alive: An intensive study.

J. Ajayan, D. Nirmal, Shubham Tayal, Sandip Bhattacharya, L. Arivazhagan, A. S. Augustine Fletcher, P. Murugapandiyan, D. Ajitha

Microelectron. J., 2021

2019

GaAs metamorphic high electron mobility transistors for future deep space-biomedical-millitary and communication system applications: A review.

J. Ajayan, D. Nirmal, P. Mohankumar, Dheena Kuriyan, A. S. Augustine Fletcher, L. Arivazhagan, B. Santhosh Kumar

Microelectron. J., 2019