L. Qin

According to our database, L. Qin authored at least 2 papers between 2019 and 2025.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2025

Hot Carrier Degradation and performance boost on Si Channel nFET Gate-All-Around Nanosheet Devices.

H. Zhou, M. Hasanuzzaman, S. D. Suk, S. Emans, S. Siddiqui, R. Robison, R. Vega, M. Wang, Yasir Sulehria, S. Mochizuki, C. Durfee, Oleg Gluschenkov, N. Fokas, G. Bajpai, E. Leobandung, R. Mo, R. Krishnan, K. Okada, H. Miki, L. Qin, C. Child, T. Standaert, K. Zhao, D. Sohn, Y. Fukuzaki, K. Tomida, D. Guo, H. Bu

Proceedings of the IEEE International Reliability Physics Symposium, 2025

2019

TCAD Simulation on FinFET n-type Power Device HCI Reliability Improvement.

Benyuan Zhu, E. M. Bazizi, J. H. M. Tng, Z. Li, E. K. Banghart, M. K. Hassan, Y. Hu, D. Zhou, D. Choi, L. Qin, Xuan Wan

Proceedings of the IEEE International Reliability Physics Symposium, 2019