Leiyu Gao

According to our database, Leiyu Gao authored at least 2 papers between 2024 and 2025.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2025

Effect of Gate Structure on the Performances of Lateral AlGaN/GaN High-Electron-Mobility Avalanche-Transit-Time Transistor.

Yang Dai, Leiyu Gao, Yukun Li, Jing Zuo, Yue Zhang, Wu Zhao

IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., April, 2025

2024

Study of p-(6H, 4H, 3C)SiC/n-GaN Heterojunction SDR, DDR IMPATT Diodes.

Yang Dai, Yukun Li, Leiyu Gao, Jing Zuo, Cheng Chen, Zhongxu Wang, Wu Zhao

IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., December, 2024