Longge Deng
Orcid: 0009-0004-4577-2028
According to our database1,
Longge Deng authored at least 2 papers
between 2022 and 2026.
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Bibliography
2026
High power density X-band source-connected field plate-free AlGaN/GaN HEMT with recessed gate oxidation process.
Sci. China Inf. Sci., 2026
2022
First Demonstration of High PAE Performance Using InGaN Channel HEMT for 5G RF Applications.
Proceedings of the 2022 IEEE International Conference on Integrated Circuits, 2022