Hao Lu

According to our database, Hao Lu authored at least 8 papers between 2021 and 2026.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2026

High linearity and high-power of composite component graded-AlGaN/graded-InGaN/ GaN HEMTs.

Qian Yu, Ling Yang, Long Zhang, Chunzhou Shi, Bin Hou, Mei Wu, Meng Zhang, Hao Lu, Xu Zou, Wenze Gao, Xiaohua Ma, Yue Hao

Sci. China Inf. Sci., 2026

High power density X-band source-connected field plate-free AlGaN/GaN HEMT with recessed gate oxidation process.

Hao Lu, Xiaohua Ma, Longge Deng, Ling Yang, Bin Hou, Meng Zhang, Mei Wu, Yue Hao

Sci. China Inf. Sci., 2026

High ON/OFF and high FoM of fmax×BV×Lg InAlN/GaN HEMTs by using polycrystalline-AlN cap.

Shiming Li, Hao Lu, Ling Yang, Mei Wu, Bin Hou, Meng Zhang, Xiaohua Ma, Yue Hao

Sci. China Inf. Sci., 2026

2025

Gate conduction mechanisms and high Vth stability of Cu-gated p-GaN HEMT.

Mao Jia, Bin Hou, Ling Yang, Meng Zhang, Mei Wu, Hao Lu, Xitong Hong, Zhiqiang Xue, Jiale Du, Qingyuan Chang, Qian Xiao, Xiaohua Ma, Yue Hao

Sci. China Inf. Sci., 2025

2024

Improved RF power performance via electrostatic shielding effect using AlGaN/GaN/graded-AlGaN/GaN double-channel structure.

Chunzhou Shi, Ling Yang, Meng Zhang, Hao Lu, Mei Wu, Bin Hou, Xuerui Niu, Qian Yu, Wenliang Liu, Wenze Gao, Xiaohua Ma, Yue Hao

Sci. China Inf. Sci., 2024

High-voltage quasi-vertical GaN-on-Si Schottky barrier diode with edge termination structure of optimized multi-level N ion implantation.

Qingyuan Chang, Bin Hou, Ling Yang, Mei Wu, Meng Zhang, Hao Lu, Fuchun Jia, Xuerui Niu, Chunzhou Shi, Jiale Du, Mao Jia, Qian Yu, Shiming Li, Youjun Zhu, Xiaohua Ma, Yue Hao

Sci. China Inf. Sci., 2024

2022

First Demonstration of High PAE Performance Using InGaN Channel HEMT for 5G RF Applications.

Hao Lu, Likun Zhou, Longge Deng, Ling Yang, Bin Hou, Xiaohua Ma, Yue Hao

Proceedings of the 2022 IEEE International Conference on Integrated Circuits, 2022

2021

Novel Selective Area Recessed Regrowth-free Ohmic Contacts to High Al-content Barrier.

Hao Lu, Xiaohua Ma, Bin Hou, Ling Yang, Teng Huo, Zeyan Si, Yue Hao

Proceedings of the 2021 IEEE International Conference on Integrated Circuits, 2021