Masaaki Kuzuhara

According to our database, Masaaki Kuzuhara authored at least 8 papers between 1997 and 2020.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2020

Deep-Donor-Induced Suppression of Current Collapse in an AlGaN-GaN Heterojunction Structure Grown on Si.

Taketoshi Tanaka, Norikazu Ito, Shinya Takado, Masaaki Kuzuhara, Ken Nakahara

IEICE Trans. Electron., 2020

2012

Superior DC and RF Performance of AlGaN-Channel HEMT at High Temperatures.

Maiko Hatano, Norimasa Yafune, Hirokuni Tokuda, Yoshiyuki Yamamoto, Shin Hashimoto, Katsushi Akita, Masaaki Kuzuhara

IEICE Trans. Electron., 2012

2010

Foreword.

Masaaki Kuzuhara

IEICE Trans. Electron., 2010

2009

Simulation of Tunneling Contact Resistivity in Non-polar AlGaN/GaN Heterostructures.

Hironari Chikaoka, Yoichi Takakuwa, Kenji Shiojima, Masaaki Kuzuhara

IEICE Trans. Electron., 2009

2008

Special Section on Fundamentals and Applications of Advanced Semiconductor Devices.

Masaaki Kuzuhara

IEICE Trans. Electron., 2008

Theoretical simulation of DC and RF performance for AlInN/InGaN/AlInN double-heterojunction FET using a Monte Carlo approach.

Kazuki Kodama, Masaaki Kuzuhara

IEICE Electron. Express, 2008

1999

L/S-band 140-W push-pull power AlGaAs/GaAs HFET's for digital cellular base stations.

Isao Takenaka, Kouji Ishikura, Hidemasa Takahashi, Kazunori Asano, Junko Morikawa, K. Satou, K. Kishi, Kouichi Hasegawa, K. Tokunaga, Fumiaki Emori, Masaaki Kuzuhara

IEEE J. Solid State Circuits, 1999

1997

A 50-W low distortion GaAs MESFET for digital cellular base stations.

Fuminobu Ono, Zenzo Singu, Kazunori Asano, Junko Morikawa, Masaaki Kuzuhara, Fumiaki Emori

IEEE J. Solid State Circuits, 1997