Mehak Ashraf Mir

According to our database, Mehak Ashraf Mir authored at least 7 papers between 2023 and 2025.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of five.

2025

Bridging the Performance and Reliability Gap of GaN-on-Si with GaN-on-SiC RF HEMTs by Efficient Electric Field Management Using a Novel p-type Oxide Passivation.

Mohammad Ateeb Munshi, Saniya Syed Wani, Mehak Ashraf Mir, Anup Thakare, Mayank Shrivastava

Proceedings of the IEEE International Reliability Physics Symposium, 2025

Evidence of Back-Gating and its Impact on Breakdown in GaN-on-Si HEMTs with Carbon Doped Buffer Under Pulsed Conditions.

Mohammad Ateeb Munshi, Mehak Ashraf Mir, Mayank Shrivastava

Proceedings of the IEEE International Reliability Physics Symposium, 2025

Experimental Validation of Buffer Traps-Driven Electric Field Dynamics Governing Breakdown and Leakage Trends in AlGaN/GaN Heterostructures.

Rasik Rashid Malik, Simran R. Karthik, Vipin Joshi, Rajarshi Roy Chaudhuri, Mohammad Ateeb Munshi, Mehak Ashraf Mir, Saniya Syed Wani, Mayank Shrivastava

Proceedings of the IEEE International Reliability Physics Symposium, 2025

2024

On The Role of Stress Engineering of Surface Passivation in Determining the Device Performance of AlGaN/GaN HEMTs.

Mehak Ashraf Mir, Anup Thakare, Mohammad Ateeb Munshi, V. Avinash, Saniya S. Wani, Zubear Khan, Rajarshi Roy Chaudhuri, Simran R. Karthik, Rasik Rashid Malik, Vipin Joshi, Mayank Shrivastava

Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023

Dynamic Interplay of Surface and Buffer Traps in Determining Drain Current Injection induced Device Instability in OFF-state of AlGaN/GaN HEMTs.

Mehak Ashraf Mir, Vipin Joshi, Rajarshi Roy Chaudhuri, Mohammad Ateeb Munshi, Rasik Rashid Malik, Mayank Shrivastava

Proceedings of the IEEE International Reliability Physics Symposium, 2023

Signatures of Positive Gate Over-Drive Induced Hole Trap Generation and its Impact on p-GaN Gate Stack Instability in AlGaN/GaN HEMTs.

Rasik Rashid Malik, Vipin Joshi, Rajarshi Roy Chaudhuri, Mehak Ashraf Mir, Zubear Khan, Avinas N. Shaji, Madhura Bhattacharya, Anup T. Vitthal, Mayank Shrivastava

Proceedings of the IEEE International Reliability Physics Symposium, 2023

Unique Lattice Temperature Dependent Evolution of Hot Electron Distribution in GaN HEMTs on C-doped GaN Buffer and its Reliability Consequences.

Rajarshi Roy Chaudhuri, Vipin Joshi, Amratansh Gupta, Tanmay Joshi, Rasik Rashid Malik, Mehak Ashraf Mir, Sayak Dutta Gupta, Mayank Shrivastava

Proceedings of the IEEE International Reliability Physics Symposium, 2023