Mikko Varonen

According to our database, Mikko Varonen authored at least 14 papers between 2005 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2023

220-240-GHz High-Gain Phase Shifter Chain and Power Amplifier for Scalable Large Phased-Arrays.

Md Najmussadat, Raju Ahamed, Mikko Varonen, Dristy Parveg, Mikko Kantanen, Kari A. I. Halonen

IEEE Access, 2023

2021

Beam-Reconfigurable Antenna Based on Vector Modulator and Rotman Lens on LTCC.

Sabin Kumar Karki, Mikko Varonen, Mikko Kaunisto, Arto Rantala, Markku Lahti, Antti Lamminen, Jan Holmberg, Mikko Kantanen, Juha Ala-Laurinaho, Ville Viikari

IEEE Access, 2021

A Compact Low-Power 140-GHz Low-Noise Amplifier with 19-dB Gain and 7-dB NF.

Kaisa Ryynänen, Kari Stadius, Andreas Hammer, Mikko Varonen, Henrik Forsten, Tero Kiuru, Ville Viikari, Jussi Ryynänen

Proceedings of the IEEE International Symposium on Circuits and Systems, 2021

2020

Design and Analysis of an E-Band Power Detector in 0.13 μm SiGe BiCMOS Technology.

Raju Ahamed, Mikko Varonen, Dristy Parveg, Md Najmussadat, Mikko Kantanen, Kari A. I. Halonen

Proceedings of the IEEE International Symposium on Circuits and Systems, 2020

2018

Design of an E-band Doherty Power amplifier.

Md Najmussadat, Raju Ahamed, Dristy Parveg, Mikko Varonen, Kari Halonen

Proceedings of the 14th Conference on Ph.D. Research in Microelectronics and Electronics, 2018

2017

Design of high-performance E-band SPDT switch and LNA in 0.13 μm SiGe BiCMOS technology.

Raju Ahamed, Mikko Varonen, Dristy Parveg, Jan Saijets, Kari Halonen

Proceedings of the IEEE Nordic Circuits and Systems Conference, 2017

2014

A 97-106-GHz differential I-Q phase shifter in 28-nm CMOS.

Ali Vahdati, Mikko Varonen, Mikko Kärkkäinen, Dristy Parveg, Kari Halonen

Proceedings of the 2014 NORCHIP, Tampere, Finland, October 27-28, 2014, 2014

2010

A W-band 65nm CMOS transmitter front-end with 8GHz IF bandwidth and 20dB IR-ratio.

Dan Sandström, Mikko Varonen, Mikko Kärkkäinen, Kari Halonen

Proceedings of the IEEE International Solid-State Circuits Conference, 2010

2009

W-Band CMOS Amplifiers Achieving +10 dBm Saturated Output Power and 7.5 dB NF.

Dan Sandström, Mikko Varonen, Mikko Kärkkäinen, Kari A. I. Halonen

IEEE J. Solid State Circuits, 2009

W-band CMOS amplifiers achieving +10dBm saturated output oower and 7.5dB NF.

Dan Sandström, Mikko Varonen, Mikko Kärkkäinen, Kari Halonen

Proceedings of the IEEE International Solid-State Circuits Conference, 2009

2008

Millimeter-Wave Integrated Circuits in 65-nm CMOS.

Mikko Varonen, Mikko Kärkkäinen, Mikko Kantanen, Kari A. I. Halonen

IEEE J. Solid State Circuits, 2008

2007

V-band balanced resistive mixer in 65-nm CMOS.

Mikko Varonen, Mikko Kärkkäinen, Kari A. I. Halonen

Proceedings of the 33rd European Solid-State Circuits Conference, 2007

Millimeter-wave amplifiers in 65-nm CMOS.

Mikko Varonen, Mikko Kärkkäinen, Kari A. I. Halonen

Proceedings of the 33rd European Solid-State Circuits Conference, 2007

2005

Metamorphic HEMT amplifier for K- and Ka-band applications.

Mikko Varonen, Mikko Kärkkäinen, Pekka Kangaslahti, Kari Halonen

Proceedings of the 2005 European Conference on Circuit Theory and Design, 2005