Nelson Sepúlveda-Ramos

According to our database, Nelson Sepúlveda-Ramos authored at least 5 papers between 2020 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

The Effects of Carbon Doping on the Performance and Electrical Reliability of SiGe HBTs.

Harrison P. Lee, Nelson Sepúlveda-Ramos, Jeffrey W. Teng, Jackson P. Moody, Delgermaa Nergui, Brett L. Ringel, Zachary R. Brumbach, Alizeh Premani, Uppili S. Raghunathan, Vibhor Jain, John D. Cressler

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2023

2022

Improved Electrical Reliability and Performance Enhancements in SiGe HBTs Using Dummy BEOL Metal Layers.

Nelson Sepúlveda-Ramos, Jeffrey W. Teng, Harrison Lee, John D. Cressler

Proceedings of the 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2022

Performance vs. Reliability Tradeoffs of Medium Breakdown and High Performance Cascode Amplifier Cells.

Harrison Lee, Arya Moradinia, Jeffrey W. Teng, Nelson Sepúlveda-Ramos, John D. Cressler

Proceedings of the 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2022

2021

Dynamic Behavior of Breakdown Mechanisms in SiGe HBTs.

Harrison P. Lee, Jeffrey W. Teng, Nelson Sepúlveda-Ramos, John D. Cressler

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2021

2020

Circuit-Level Safe-Operating-Area of a High-Speed SiGe BiCMOS Wireline Driver.

Arya Moradinia, Rafael Perez Martinez, Jeffrey W. Teng, Nelson Sepúlveda-Ramos, Harrison Lee, John D. Cressler

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2020