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Nenad Novkovski

Orcid: 0000-0003-0084-7888

According to our database1, Nenad Novkovski authored at least 5 papers between 2003 and 2014.

Collaborative distances:
  • Dijkstra number2 of six.
  • Erdős number3 of six.

Timeline

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Links

On csauthors.net:

Bibliography

2014
Time-dependent-dielectric-breakdown characteristics of Hf-doped Ta<sub>2</sub>O<sub>5</sub>/SiO<sub>2</sub> stack.
[BibTeX]
[DOI]
Elena Atanassova
,
Nenad Novkovski
,
D. Spassov
,
Albena Paskaleva
,
Aleksandar Skeparovski
Microelectron. Reliab., 2014

2011
Computer-Added C-V Measurement and Analysis of Metal/High-κ/Si Structures.
[BibTeX]
[DOI]
Lihnida Stojanovska-Georgievska
,
Nenad Novkovski
Proceedings of the ICT Innovations 2011, Skopje, Macedonia, 14-16 September, 2011, 2011

2010
Constant current stress-induced leakage current in mixed HfO<sub>2</sub>-Ta<sub>2</sub>O<sub>5</sub> stacks.
[BibTeX]
[DOI]
Elena Atanassova
,
Nenad Novkovski
,
Albena Paskaleva
,
D. Spassov
Microelectron. Reliab., 2010

2008
Effects of the metal gate on the stress-induced traps in Ta<sub>2</sub>O<sub>5</sub>/SiO<sub>2</sub> stacks.
[BibTeX]
[DOI]
Elena Atanassova
,
Albena Paskaleva
,
Nenad Novkovski
Microelectron. Reliab., 2008

2003
Electrical properties of thin RF sputtered Ta<sub>2</sub>O<sub>5</sub> films after constant current stress.
[BibTeX]
[DOI]
M. Pecovska-Gjorgjevich
,
Nenad Novkovski
,
Elena Atanassova
Microelectron. Reliab., 2003


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