Omar B. Mohammed

According to our database, Omar B. Mohammed authored at least 1 paper in 2019.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2019

Tunnel Barrier Thickness, Interlayer Rotational Alignment, and Top Gating Effects on ReS2/hBN/ReS2 Resonant Interlayer Tunnel Field Effect Transistors.

Omar B. Mohammed, Leonard F. Register, Sanjay K. Banerjee

Proceedings of the Device Research Conference, 2019