R. P. Shi

According to our database, R. P. Shi authored at least 2 papers between 2014 and 2016.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2016

Nb-doped Ga₂O₃ as charge-trapping layer for nonvolatile memory applications.

R. P. Shi, X. D. Huang, Johnny K. O. Sin, Pui-To Lai

Microelectron. Reliab., 2016

2014

Charge-trapping characteristics of BaTiO₃ with and without nitridation for nonvolatile memory applications.

X. D. Huang, R. P. Shi, C. H. Leung, Pui-To Lai

Microelectron. Reliab., 2014