Rajat Sinha

Orcid: 0000-0003-0169-2857

According to our database1, Rajat Sinha authored at least 2 papers between 2018 and 2020.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of five.

Timeline

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Links

On csauthors.net:

Bibliography

2020
Threshold Voltage Shift in a-Si: H Thin film Transistors under ESD stress Conditions.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2018
On the ESD behavior of a-Si: H based thin film transistors: Physical insights, design and technological implications.
Proceedings of the IEEE International Reliability Physics Symposium, 2018


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