Rihito Kuroda
Orcid: 0000-0001-7812-3084
According to our database1,
Rihito Kuroda
authored at least 37 papers
between 2007 and 2024.
Collaborative distances:
Collaborative distances:
Timeline
Legend:
Book In proceedings Article PhD thesis Dataset OtherLinks
Online presence:
-
on orcid.org
On csauthors.net:
Bibliography
2024
A 134×132 4-Tap CMOS Indirect Time-of-Flight Range Imager Using In-Pixel Memory Array With 10 Kfps High-Speed Mode and High Precision Mode.
IEEE J. Solid State Circuits, February, 2024
2022
Two High-Precision Proximity Capacitance CMOS Image Sensors with Large Format and High Resolution.
Sensors, 2022
A 4-Tap CMOS Time-of-Flight Image Sensor with In-pixel Analog Memory Array Achieving 10Kfps High-Speed Range Imaging and Depth Precision Enhancement.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022
2021
A Proposal of Analog Correlated Multiple Sampling with High Density Capacitors for Low Noise CMOS Image Sensors.
Proceedings of the Imaging Sensors and Systems 2021, online, January 11-28, 2021, 2021
2020
Over 100 Million Frames per Second 368 Frames Global Shutter Burst CMOS Image Sensor with Pixel-wise Trench Capacitor Memory Array.
Sensors, 2020
An Optical Filter-Less CMOS Image Sensor with Differential Spectral Response Pixels for Simultaneous UV-Selective and Visible Imaging.
Sensors, 2020
Effect of Drain-to-Source Voltage on Random Telegraph Noise Based on Statistical Analysis of MOSFETs with Various Gate Shapes.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020
An Over 120dB Dynamic Range Linear Response Single Exposure CMOS Image Sensor with Two-stage Lateral Overflow Integration Trench Capacitors.
Proceedings of the Imaging Sensors and Systems 2020, 2020
2019
A Highly Robust Silicon Ultraviolet Selective Radiation Sensor Using Differential Spectral Response Method.
Sensors, 2019
2018
High Speed and Narrow-Bandpass Liquid Crystal Filter for Real-Time Multi Spectral Imaging Systems.
IEICE Trans. Electron., 2018
A Preliminary Chip Evaluation toward Over 50Mfps Burst Global Shutter Stacked CMOS Image Sensor.
Proceedings of the Image Sensors and Imaging Systems 2018, 2018
2017
High Sensitivity and High Readout Speed Electron Beam Detector using Steep pn Junction Si diode for Low Acceleration Voltage.
Proceedings of the Image Sensors and Imaging Systems 2017, 2017
2016
A dead-time free global shutter CMOS image sensor with in-pixel LOFIC and ADC using pixel-wis e connections.
Proceedings of the 2016 IEEE Symposium on VLSI Circuits, 2016
A high sensitivity compact gas concentration sensor using UV light and charge amplifier circuit.
Proceedings of the 2016 IEEE SENSORS, Orlando, FL, USA, October 30 - November 3, 2016, 2016
190-1100 nm Waveband multispectral imaging system using high light resistance wide dynamic range CMOS image sensor.
Proceedings of the 2016 IEEE SENSORS, Orlando, FL, USA, October 30 - November 3, 2016, 2016
2015
A linear response single exposure CMOS image sensor with 0.5e<sup>-</sup> readout noise and 76ke<sup>-</sup> full well capacity.
Proceedings of the Symposium on VLSI Circuits, 2015
Analysis of pixel gain and linearity of CMOS image sensor using floating capacitor load readout operation.
Proceedings of the Image Sensors and Imaging Systems 2015, 2015
2014
Si image sensors with wide spectral response and high robustness to ultraviolet light exposure.
IEICE Electron. Express, 2014
A statistical evaluation of effective time constants of random telegraph noise with various operation timings of in-pixel source follower transistors.
Proceedings of the Image Sensors and Imaging Systems 2014, 2014
Ultra-high speed video capturing of time dependent dielectric breakdown of metal-oxide-silicon capacitor up to 10M frame per second.
Proceedings of the Image Sensors and Imaging Systems 2014, 2014
Pixel structure with 10 nsec fully charge transfer time for the 20m frame per second burst CMOS image sensor.
Proceedings of the Image Sensors and Imaging Systems 2014, 2014
A 1024×1 linear photodiode array sensor with fast readout speed flexible pixel-level integration time and high stability to UV light exposure.
Proceedings of the Image Sensors and Imaging Systems 2014, 2014
2013
A Global-Shutter CMOS Image Sensor With Readout Speed of 1-Tpixel/s Burst and 780-Mpixel/s Continuous.
IEEE J. Solid State Circuits, 2013
Proceedings of the Sensors, 2013
New analog readout architecture for low noise CMOS image sensors using column-parallel forward noise-canceling circuitry.
Proceedings of the Sensors, 2013
A statistical evaluation of low frequency noise of in-pixel source follower-equivalent transistors with various channel types and body bias.
Proceedings of the Sensors, 2013
A UV Si-photodiode with almost 100% internal Q.E. and high transmittance on-chip multilayer dielectric stack.
Proceedings of the Sensors, 2013
Color reproductivity improvement with additional virtual color filters for WRGB image sensor.
Proceedings of the Color Imaging XVIII: Displaying, 2013
2012
A global-shutter CMOS image sensor with readout speed of 1Tpixel/s burst and 780Mpixel/s continuous.
Proceedings of the 2012 IEEE International Solid-State Circuits Conference, 2012
Photodiode dopant structure with atomically flat Si surface for high-sensitivity and stability to UV light.
Proceedings of the Sensors, 2012
2011
A prototype high-speed CMOS image sensor with 10, 000, 000 fps burst-frame rate and 10, 000 fps continuous-frame rate.
Proceedings of the Digital Photography VII, 2011
Proceedings of the Digital Photography VII, 2011
2009
Data Analysis Technique of Atomic Force Microscopy for Atomically Flat Silicon Surfaces.
IEICE Trans. Electron., 2009
Proceedings of the 35th European Solid-State Circuits Conference, 2009
2008
Accurate negative bias temperature instability lifetime prediction based on hole injection.
Microelectron. Reliab., 2008
2007
Examination of degradation mechanism due to negative bias temperature stress from a perspective of hole energy for accurate lifetime prediction.
Microelectron. Reliab., 2007
Circuit level prediction of device performance degradation due to negative bias temperature stress.
Microelectron. Reliab., 2007