Rongming Chu

According to our database, Rongming Chu authored at least 3 papers between 2012 and 2019.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2019

Characteristics of P-channel GaN MOSFET up to 300 °C.

Sang Woo Han, Jianan Song, Rongming Chu

Proceedings of the Device Research Conference, 2019

2013

Recent advances in GaN power electronics.

Karim Boutros, Rongming Chu, Brian Hughes

Proceedings of the IEEE 2013 Custom Integrated Circuits Conference, 2013

2012

Critical gate module process enabling the implementation of a 50A/600V AlGaN/GaN MOS-HEMT.

Sameh G. Khalil, Rongming Chu, Ray Li, Danny Wong, Scott Newell, Xu Chen, M. Chen, D. Zehnder, S. Kim, A. Corrion, Brian Hughes, Karim Boutros, C. Namuduri

Proceedings of the 2012 European Solid-State Device Research Conference, 2012