Ruiyuan Yin

According to our database, Ruiyuan Yin authored at least 2 papers in 2019.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2019

Toward Reliable Extraction of the Properties of Border Traps in Lateral GaN Power MOSFET with a Distributed Network Model.

Ruiyuan Yin, Yue Li, Wei Lin, Cheng P. Wen, Yilong Hao, Yunyi Fu, Maojun Wang

Proceedings of the International Conference on IC Design and Technology, 2019

High-Performance Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate with a Low Dislocation Density Drift Layer.

Yue Li, Ruiyuan Yin, Ming Tao, Yilong Hao, Cheng P. Wen, Maojun Wang, Jie Zhang, Xuelin Yang, Bo Shen

Proceedings of the International Conference on IC Design and Technology, 2019