S. Meli

According to our database¹, S. Meli authored at least 2 papers between 2003 and 2004.

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2004

Standard and C-AFM tests to study the post-BD gate oxide conduction of MOS devices after current limited stresses.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2004

2003

Pre-breakdown noise in electrically stressed thin SiO<sub>2</sub> layers of MOS devices observed with C-AFM.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2003