Sandrine Lhostis

According to our database, Sandrine Lhostis authored at least 2 papers between 2018 and 2024.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2024

Effect of Metallic Ion Implantation on Dark Current Distributions of Silicon-Based CMOS Image Sensors.

Juan Esteban Montoya Cardona, Sylvain Joblot, Pierre Kermagoret, Grégoire Ducotey, Stéphane Hardillier, Guillaume Dupeux, Yannick Borde, Jean-Pierre Carrère, Sandrine Lhostis, Richard Monflier, Olivier Marcelot, Vincent Goiffon

Proceedings of the 2024 IEEE SENSORS, Kobe, Japan, October 20-23, 2024, 2024

2018

Cu-SiO2 hybrid bonding simulation including surface roughness and viscoplastic material modeling: A critical comparison of 2D and 3D modeling approach.

Thomas Wlanis, René Hammer, Werner Ecker, Sandrine Lhostis, Clément Sart, Sébastien Gallois-Garreignot, Bernhard Rebhan, Günther A. Maier

Microelectron. Reliab., 2018