Satyabrata Jit

Orcid: 0000-0001-6772-8117

According to our database1, Satyabrata Jit authored at least 13 papers between 2006 and 2024.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of five.

Timeline

Legend:

Book  In proceedings  Article  PhD thesis  Dataset  Other 

Links

Online presence:

On csauthors.net:

Bibliography

2024
A Deep Insight into Frequency and Voltage Variation Impact on Memristor Performance and Applications of Memristor-NMOS Hybrid Structure in the Digital Domain.
Proceedings of the 28th International Symposium on VLSI Design and Test, 2024

2023
Impact of self-heating on thermal noise in In<sub>1-x</sub>Ga<sub>x</sub>As GAA MOSFETs.
Microelectron. J., 2023

2020
Investigation of DC, RF and linearity performances of a back-gated (BG) heterojunction (HJ) TFET-on-selbox-substrate (STFET): Introduction to a BG-HJ-STEFT based CMOS inverter.
Microelectron. J., 2020

2019
A Target Tracking System Using Directional Nodes in Wireless Sensor Networks.
IEEE Syst. J., 2019

Subthreshold Performance Analysis of Double-Fin Multi-channel Junctionless Transistor with Substrate Bias Effects.
Proceedings of the TENCON 2019, 2019

2018
Coverage and Connectivity in WSNs: A Survey, Research Issues and Challenges.
IEEE Access, 2018

2016
Electrical and Optical Characteristics of Pd/ZnO Quantum Dots Based Schottky Photodiode on n-Si.
Proceedings of the IEEE International Symposium on Nanoelectronic and Information Systems, 2016

Optical Characteristics of Solution Processed MoO2/ZnO Quantum Dots Based Thin Film Transitor.
Proceedings of the IEEE International Symposium on Nanoelectronic and Information Systems, 2016

Electrical and optical characteristics of CdSe Quantum Dot based Schottky diode.
Proceedings of the 11th International Conference on Industrial and Information Systems, 2016

2013
Analytical modelling of the current (I)-voltage (V) characteristics of sub-micron gate-length ion-implanted GaAs MESFETs under dark and illuminated conditions.
IET Circuits Devices Syst., 2013

2011
An Analytical Drain Current Model for Short-Channel Triple-Material Double-Gate MOSFETs.
Proceedings of the IEEE Computer Society Annual Symposium on VLSI, 2011

2010
Modelling of doping-dependent subthreshold swing of symmetric double-gate MOSFETs.
IET Circuits Devices Syst., 2010

2006
Analytical study of the photo-effects on common-source and common-drain microwave oscillators using high pinch-off n-GaAs MESFETs.
Microelectron. J., 2006


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