Sébastien Morand

According to our database, Sébastien Morand authored at least 2 papers between 2014 and 2017.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of four.

2017

Non-homogenous gamma process: Application to SiC MOSFET threshold voltage instability.

Thomas Santini, Sébastien Morand, Mitra Fouladirad, Florent Miller, Antoine Grall, Bruno Allard

Microelectron. Reliab., 2017

2014

Accelerated degradation data of SiC MOSFETs for lifetime and Remaining Useful Life assessment.

Thomas Santini, Sébastien Morand, Mitra Fouladirad, Luong-Viêt Phung, Florent Miller, Bruno Foucher, Antoine Grall, Bruno Allard

Microelectron. Reliab., 2014