Shengwei Yang

According to our database, Shengwei Yang authored at least 4 papers between 2021 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

Stress Migration of Aluminum Backside Interconnect in Xtacking®.

Kang Yang, Suhui Yang, Yan Ouyang, Shengwei Yang, Kun Han, Yi He

Proceedings of the IEEE International Reliability Physics Symposium, 2023

Polarity Dependency and 1/E Model of Gate Oxide TDDB Degradation in 3D NAND.

Lina Qu, Shengwei Yang, Ming He, Rui Fang, Xiaojuan Zhu, Kun Han, Yi He

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

Investigation of Retention Characteristics in a Triple-level Charge Trap 3D NAND Flash Memory.

Yunjie Fan, Zhiqiang Wang, Shengwei Yang, Kun Han, Yi He

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021

Excellent Reliability of Xtacking™ Bonding Interface.

Yan Ouyang, Suhui Yang, Dandan Yin, Xiang Huang, Zhiqiang Wang, Shengwei Yang, Kun Han, Zhongyi Xia

Proceedings of the IEEE International Reliability Physics Symposium, 2021