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Shih-Han Yi

According to our database1, Shih-Han Yi authored at least 2 papers between 2015 and 2017.

Collaborative distances:
  • Dijkstra number2 of six.
  • Erdős number3 of five.

Timeline

Legend:

Book 
In proceedings 
Article 
PhD thesis 
Dataset
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Links

On csauthors.net:

Bibliography

2017
Improved reliability characteristics of Ge MOS devices by capping Hf or Zr on interfacial layer.
[BibTeX]
[DOI]
Yan-Lin Li
,
Kuei-Shu Chang-Liao
,
Yu-Wei Chang
,
Tse-Jung Huang
,
Chen-Chien Li
,
Zhao-Chen Gu
,
Po-Yen Chen
,
Tzung-Yu Wu
,
Jiayi Huang
,
Fu-Chuan Chu
,
Shih-Han Yi
Microelectron. Reliab., 2017

2015
Gate leakage current suppression and reliability improvement for ultra-low EOT Ge MOS devices by suitable HfAlO/HfON thickness and sintering temperature.
[BibTeX]
[DOI]
Wei-Fong Chi
,
Kuei-Shu Chang-Liao
,
Shih-Han Yi
,
Chen-Chien Li
,
Yan-Lin Li
Microelectron. Reliab., 2015


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