Shiwei Feng

Orcid: 0000-0001-9038-8309

Affiliations:
  • Beijing University of Technology, Institute of Semiconductor Device Reliability Physics, Beijing, China


According to our database1, Shiwei Feng authored at least 13 papers between 2013 and 2024.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

Legend:

Book 
In proceedings 
Article 
PhD thesis 
Dataset
Other 

Links

Online presence:

On csauthors.net:

Bibliography

2024
A Trap Characterization System for GaN HEMTs Based on Transient Drain Voltage.
IEEE Trans. Instrum. Meas., 2024

2023
Research on Transient Temperature Rise Measurement Method for Semiconductor Devices Based on Photothermal Reflection.
IEEE Trans. Instrum. Meas., 2023

A numerical calibration of structure-function transient thermal measurement based on Cauer RC network.
Microelectron. J., 2023

2021
Build-in compact and efficient temperature sensor array on field programmable gate array.
Microelectron. J., 2021

2017
Thermal evaluation of GaN-based HEMTs with various layer sizes and structural parameters using finite-element thermal simulation.
Microelectron. Reliab., 2017

Optimized thermal sensor allocation for field-programmable gate array temperature measurements based on self-heating test.
Microelectron. J., 2017

Influence of heat source size on thermal resistance of AlGaN/GaN HEMT.
Proceedings of the 12th IEEE International Conference on ASIC, 2017

2016
Identifying the spatial position and properties of traps in GaN HEMTs using current transient spectroscopy.
Microelectron. Reliab., 2016

2015
The effect of external stress on the properties of AlGaAs/GaAs single quantum well laser diodes.
Microelectron. Reliab., 2015

All-digital thermal distribution measurement on field programmable gate array using ring oscillators.
Microelectron. Reliab., 2015

The effect of external stress on the electrical characteristics of AlGaN/GaN HEMTs.
Microelectron. Reliab., 2015

Thermal investigation of LED array with multiple packages based on the superposition method.
Microelectron. J., 2015

2013
Two-dimensional transient simulations of the self-heating effects in GaN-based HEMTs.
Microelectron. Reliab., 2013


  Loading...