Tadao Ishibashi

Orcid: 0000-0002-9327-7599

According to our database1, Tadao Ishibashi authored at least 12 papers between 2005 and 2026.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Awards

IEEE Fellow

IEEE Fellow 2005, "For contributions to high-speed and optoelectronic semiconductor devices.".

Timeline

Legend:

Book  In proceedings  Article  PhD thesis  Dataset  Other 

Links

On csauthors.net:

Bibliography

2026
A Single High-Power SiC-Based UTC-PD Enabling a 40-Gbit/s Two-Channel FDM-THz Link.
Proceedings of the Optical Fiber Communications Conference and Exhibition, 2026

2025
Double-side-input subharmonic mixer using planar bowtie antenna based on Fermi-level managed barrier diodes on SiC platform.
IEICE Electron. Express, 2025

5-mW 300-GHz-Band THz-Wave Generator Consisting of Two SiC-Based Photomixers and Power Combiner.
Proceedings of the Optical Fiber Communications Conference and Exhibition, 2025

300-GHz Photonic Wireless Link with 5.3 mW Output Power Using Waveguide-Combined UTC-PD/SiC Photomixers.
Proceedings of the European Conference on Optical Communications, 2025

2024
Low-noise integrated balanced-mixer for 300-GHz band based on Fermi-level managed barrier diode on Si platform.
IEICE Electron. Express, 2024

2023
Low-noise balanced mixer for 300-GHz band based on Fermi-level managed barrier diode on SiC platform.
IEICE Electron. Express, 2023

2022
Terahertz-wave sub-harmonic mixer based on silicon carbide platform.
IEICE Electron. Express, 2022

2020
Terahertz Heterodyne AND Operation for Physically Encrypted Wireless Communication.
Proceedings of the European Conference on Optical Communications, 2020

2018
600-GHz-Wave Beam Steering by Terahertz-Wave Combiner.
Proceedings of the Optical Fiber Communications Conference and Exposition, 2018

2017
Low noise homodyne detection of terahertz waves by zero-biased InP/InGaAs Fermi-level managed barrier diode.
IEICE Electron. Express, 2017

2005
Low Driving Voltage 40 Gbit/s n-i-n Mach-Zehnder Modulator Fabricated on InP Substrate.
IEICE Trans. Electron., 2005

Over-10-dBm output uni-traveling-carrier photodiode module integrating a power amplifier for wireless transmissions in the 125-GHz band.
IEICE Electron. Express, 2005


  Loading...