Masami Tokumitsu

According to our database, Masami Tokumitsu authored at least 9 papers between 1998 and 2016.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2016

An InP-Based 27-GHz-Bandwidth Limiting TIA IC Designed to Suppress Undershoot and Ringing in Its Output Waveform.

Hiroyuki Fukuyama, Michihiro Hirata, Kenji Kurishima, Minoru Ida, Masami Tokumitsu, Shogo Yamanaka, Munehiko Nagatani, Toshihiro Itoh, Kimikazu Sano, Hideyuki Nosaka, Koichi Murata

IEICE Trans. Electron., 2016

2007

InP HEMT Technology for High-Speed Logic and Communications.

Tetsuya Suemitsu, Masami Tokumitsu

IEICE Trans. Electron., 2007

2006

Low-power InP-HEMT switch ICs integrating miniaturized 2×2 switches for 10-Gb/s systems.

Hideki Kamitsuna, Yasuro Yamane, Masami Tokumitsu, Hirohiko Sugahara, Masahiro Muraguchi

IEEE J. Solid State Circuits, 2006

Novel Fabrication Technology for High Yield Sub-100-nm-Gate InP-Based HEMTs.

Hideaki Matsuzaki, Takashi Maruyama, Takatomo Enoki, Masami Tokumitsu

IEICE Trans. Electron., 2006

Improved stability in wide-recess InP HEMTs by means of a fully passivated two-step-recess gate.

Tetsuya Suemitsu, Yoshino K. Fukai, Masami Tokumitsu, Fabiana Rampazzo, Gaudenzio Meneghesso, Enrico Zanoni

IEICE Electron. Express, 2006

2005

A 24-Gsps 3-Bit Nyquist ADC Using InP HBTs for DSP-Based Electronic Dispersion Compensation.

Hideyuki Nosaka, Makoto Nakamura, Kimikazu Sano, Minoru Ida, Kenji Kurishima, Tsugumichi Shibata, Masami Tokumitsu, Masahiro Muraguchi

IEICE Trans. Electron., 2005

Over-10-dBm output uni-traveling-carrier photodiode module integrating a power amplifier for wireless transmissions in the 125-GHz band.

Hiroshi Ito, Tomofumi Furuta, Toshihiko Kosugi, Akihiko Hirata, Hiroyuki Takahashi, Yoshifumi Muramoto, Masami Tokumitsu, Yasuhiro Sato, Tadao Nagatsuma, Tadao Ishibashi

IEICE Electron. Express, 2005

2001

Three-dimensional MMIC technology for low-cost millimeter-wave MMICs.

Kenjiro Nishikawa, Kenji Kamogawa, Belinda Piernas, Masami Tokumitsu, Suehiro Sugitani, Ichihiko Toyoda, Katsuhiko Araki

IEEE J. Solid State Circuits, 2001

1998

A 40-Gbit/s superdynamic decision IC fabricated with 0.12-μm GaAs MESFET's.

Koichi Murata, Taiichi Otsuji, Mikio Yoneyama, Masami Tokumitsu

IEEE J. Solid State Circuits, 1998