Toshiro Doi

According to our database, Toshiro Doi authored at least 5 papers between 2011 and 2018.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2018

Study of Femtosecond Laser Ablation Effect on Micro-Processing for 4H-SiC Substrate.

Chengwu Wang, Syuhei Kurokawa, Julong Yuan, Li Fan, Huizong Lu, Zhe Wu, Weifeng Yao, Kehua Zhang, Yu Zhang, Toshiro Doi

Int. J. Autom. Technol., 2018

Next-Generation, Super-Hard-to-Process Substrates and Their High-Efficiency Machining Process Technologies Used to Create Innovative Devices.

Toshiro Doi

Int. J. Autom. Technol., 2018

Editorial: Innovative SiC/GaN/Diamond Single-Crystal Substrates and Planarization Processing Technologies for the Next Generation ICT Society.

Toshiro Doi

Int. J. Autom. Technol., 2018

2014

Effects of N-Face Finishing on Geometry of Double-Side Polished GaN Substrate.

Koji Koyama, Hideo Aida, Michio Uneda, Hidetoshi Takeda, Seong-Woo Kim, Hiroki Takei, Tsutomu Yamazaki, Toshiro Doi

Int. J. Autom. Technol., 2014

2011

Evaluation of Pitch Deviations with Comprehensive Representation Suitable for Engagement Evaluation in Different Types of Gears.

Syuhei Kurokawa, Yasutsune Ariura, Toshiro Doi

Int. J. Autom. Technol., 2011