V. Komarnitskyy

According to our database, V. Komarnitskyy authored at least 4 papers between 2006 and 2011.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2011

Molybdenum and low-temperature annealing of a silicon power P-i-N diode.

J. Vobecký, V. Komarnitskyy, V. Záhlava

Microelectron. Reliab., 2011

2010

Doping compensation for increased robustness of fast recovery silicon diodes.

J. Vobecký, V. Záhlava, V. Komarnitskyy

Microelectron. Reliab., 2010

2007

Local lifetime control in silicon power diode by ion irradiation: introduction and stability of shallow donors.

Pavel Hazdra, V. Komarnitskyy

IET Circuits Devices Syst., 2007

2006

Lifetime control in silicon power P-i-N diode by ion irradiation: Suppression of undesired leakage.

Pavel Hazdra, V. Komarnitskyy

Microelectron. J., 2006