Wen-How Lan

According to our database, Wen-How Lan authored at least 4 papers between 2015 and 2020.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2020

Fringe Gate Leakage of 28nm HK/MG nMOSFETs with Nitridation Treatments.

De-Cheng Zhang, Ching-Chuan Chou, Ho-Hsiang Chen, Shang-Ze Chen, Jian-Ming Chen, Hui-Yun Bor, Wen-How Lan, Mu-Chun Wang

Proceedings of the 3rd IEEE International Conference on Knowledge Innovation and Invention, 2020

Patterns of Exposing Integrity of 28nm-node High-k Gate Dielectric on p-substrate with Nitridation Treatments.

Si-Ping Li, Jia-Wei Xu, Wei-Hao Li, Jian-Ming Chen, Chao-Nan Wei, Wen-How Lan, Mu-Chun Wang

Proceedings of the 3rd IEEE International Conference on Knowledge Innovation and Invention, 2020

2018

Thermal stress probing the channel-length modulation effect of nano n-type FinFETs.

Fu-Yuan Tuan, Chii-Wen Chen, Mu-Chun Wang, Wen-Shiang Liao, Shea-Jue Wang, Shou-Kong Fan, Wen-How Lan

Microelectron. Reliab., 2018

2015

Heat stress exposing performance of deep-nano HK/MG nMOSFETs using DPN or PDA treatment.

Shea-Jue Wang, Mu-Chun Wang, Shuang-Yuan Chen, Wen-How Lan, Bor-Wen Yang, L. S. Huang, Chuan-Hsi Liu

Microelectron. Reliab., 2015