Yangbo Yi

According to our database, Yangbo Yi authored at least 5 papers between 2006 and 2016.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2016

Bipolar gate drive integrated circuit for insulated gate bipolar transistor to achieve better tradeoff between the turn-off losses and collector voltage overshoot.

Jing Zhu, Yunwu Zhang, Weifeng Sun, Yangyang Lu, Yicheng Du, Yangbo Yi

IET Circuits Devices Syst., 2016

2014

Low-jitter, high-linearity current-controlled complementary metal oxide semiconductor relaxation oscillator with optimised floating capacitors.

Jing Zhu, Yunwu Zhang, Weifeng Sun, Yangbo Yi

IET Circuits Devices Syst., 2014

2008

The degradation mechanisms in high voltage pLEDMOS transistor with thick gate oxide.

Hong Wu, Weifeng Sun, Yangbo Yi, Haisong Li, Longxing Shi

Microelectron. Reliab., 2008

Bulk-silicon power integrated circuit technology for 192-channel data driver ICs of plasma display panel.

Weifeng Sun, Haisong Li, Yangbo Yi, Hong Wu, Longxing Shi

IET Circuits Devices Syst., 2008

2006

Study of the power capability of LDMOS and the improved methods.

Zhilin Sun, Weifeng Sun, Yangbo Yi, Longxing Shi

Microelectron. Reliab., 2006