Yordan M. Georgiev

According to our database, Yordan M. Georgiev authored at least 4 papers between 2018 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

Polarity Control in Doped Silicon Junctionless Nanowire Transistor for Sensing Application.

S. Ghosh, A. Echresh, M. B. Khan, D. Bhattacharya, U. Kentsch, Slawomir Prucnal, V. Vardhan, S. Biswas, S. Hellebust, J. Wenger, J. D. Holmes, Artur Erbe, Yordan M. Georgiev

Proceedings of the Device Research Conference, 2024

2023

Evolution of point defects in pulsed-laser-melted Ge1-xSnx probed by positron annihilation lifetime spectroscopy.

Oliver Steuer, Maciej Oskar Liedke, Maik Butterling, D. Schwarz, J. Schulze, Z. Li, Andreas Wagner, Inga A. Fischer, René Hübner, Shengqiang Zhou, Manfred Helm, G. Cuniberti, Yordan M. Georgiev, Slawomir Prucnal

Dataset, December, 2023

2020

Towards Scalable Reconfigurable Field Effect Transistor using Flash Lamp Annealing.

Muhammad Bilal Khan, Sayantan Ghosh, Slawomir Prucnal, Tom Mauersberger, René Hübner, Maik Simon, Thomas Mikolajick, Artur Erbe, Yordan M. Georgiev

Proceedings of the 2020 Device Research Conference, 2020

2018

A wired-AND transistor: Polarity controllable FET with multiple inputs.

Maik Simon, Jens Trommer, Boshen Liang, D. Fischer, Tim Baldauf, Muhammad Bilal Khan, Andre Heinzig, M. Knaut, Yordan M. Georgiev, Artur Erbe, J. W. Bartha, Thomas Mikolajick, Walter M. Weber

Proceedings of the 76th Device Research Conference, 2018