Inga A. Fischer

According to our database, Inga A. Fischer authored at least 9 papers between 2016 and 2022.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2022

Investigation of Ge-Based P-Channel Planar-Doped Barrier FETs integrated on Si.

Yasmine Elogail, Fritz Berkmann, Caterina J. Clausen, Inga A. Fischer, Linda A. Hänel, Daniel Schwarz, Jörg Schulze

Microelectron. J., 2022

2021

Formation of Mn5Ge3 on a Recess-Etched Ge (111) Quantum-Well Structure for Semiconductor Spintronics.

David Weißhaupt, Hannes S. Funk, Christoph Sürgers, Gerda Fischer, Michael Oehme, Daniel Schwarz, Inga A. Fischer, Joris van Slageren, Jörg Schulze

Proceedings of the 44th International Convention on Information, 2021

Titanium and Nickel as alternative materials for mid Infrared Plasmonic.

Fritz Berkmann, M. Ayasse, F. Mörz, Inga A. Fischer, Jörg Schulze

Proceedings of the 44th International Convention on Information, 2021

2018

Simulation-based optimization of Ge-PIN-photodiodes with Al nanohole arrays for refractive index sensing.

Yuma Kawaguchi, Lion Augel, H. Uchida, M. Inoue, Jörg Schulze, Inga A. Fischer

Proceedings of the 41st International Convention on Information and Communication Technology, 2018

Performance of C6H8O7-treated and H- and Cl-passivated Ge-MOS-capacitances on Ge-virtual-substrate on Si(001).

Linda A. Hänel, Yasmine Elogail, Daniel Schwarz, Inga A. Fischer, Jörg Schulze

Proceedings of the 41st International Convention on Information and Communication Technology, 2018

Optical characterization of highly n-type doped Ge0.95Sn0.05 rod antennas on Si(001) substrates.

Fritz Berkmann, Lion Augel, M. B. Schilling, Audrey Berrier, Daniel Schwarz, David Weißhaupt, Michael Oehme, Jörg Schulze, Inga A. Fischer

Proceedings of the 41st International Convention on Information and Communication Technology, 2018

2017

Growth of patterned GeSn and GePb alloys by pulsed laser induced epitaxy.

J. Schlipf, J. L. Frieiro, Inga A. Fischer, C. Serra, Jörg Schulze, Stefano Chiussi

Proceedings of the 40th International Convention on Information and Communication Technology, 2017

Device performance tuning of Ge gate-all-around tunneling field effect transistors by means of GeSn: Potential and challenges.

Erlend G. Rolseth, Andreas Blech, Inga A. Fischer, Youssef Hashad, Roman Koerner, Konrad Kostecki, Aleksei Kruglov, V. S. Senthil Srinivasan, Mathias Weiser, Torsten Wendav, Kurt Busch, Jörg Schulze

Proceedings of the 40th International Convention on Information and Communication Technology, 2017

2016

(Si)GeSn nanostructures for optoelectronic device applications.

Inga A. Fischer, Filipe Oliveira, Alessandro Benedetti, Stefano Chiussi, Jörg Schulze

Proceedings of the 39th International Convention on Information and Communication Technology, 2016