Zhiyi Lin
Orcid: 0000-0003-1307-5733Affiliations:
- University of Electronic Science and Technology of China (UESTC), State Key Laboratory of Electronic Thin Films and Integrated Devices, China
According to our database1,
Zhiyi Lin authored at least 8 papers
between 2021 and 2026.
Collaborative distances:
Collaborative distances:
Timeline
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on orcid.org
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Bibliography
2026
A Monolithic GaN Driver With Power-Rail Charging Saturation Bootstrap Technique Achieving Enhanced Slew Rate and Gate Rise/Fall Time Ratio of 1.28.
IEEE J. Solid State Circuits, May, 2026
2024
A Fast Transient PMOS LDO with AP<sup>3</sup> Buffer and Shaped-Hybrid-Bias EA Techniques Achieving 8.15ps FOM.
Proceedings of the IEEE International Symposium on Circuits and Systems, 2024
A 300W 1.27kW/inch<sup>3</sup> 98.0% Peak Efficiency 48V-to-12V Switch Tank Converter Controller with Integrated Multilevel Driver and Adaptive ZCS On-time Control.
Proceedings of the IEEE Asian Solid-State Circuits Conference, 2024
2023
A 50-V 50-MHz High-Noise-Immunity Capacitive-Coupled Level Shifter With Digital Noise Blanker for GaN Drivers.
IEEE Trans. Circuits Syst. I Regul. Pap., May, 2023
A level shifter for high-side GaN drivers with enhanced d<i>V</i>/dt immunity and speed.
Microelectron. J., 2023
A Monolithic GaN Driver and GaN Power Switch with Power-rail Charging Saturation Bootstrap technique achieving gate rising and falling time ratio of 1.28.
Proceedings of the IEEE Custom Integrated Circuits Conference, 2023
2022
An Up to 10MHz 6.8% Minimum Duty Ratio GaN Driver with Dual-MOS-Switches Bootstrap and Adaptive Short-Pulse Based High-CMTI Level Shifter Achieving 6.05% Efficiency Improvement.
Proceedings of the IEEE Custom Integrated Circuits Conference, 2022
2021
An Anti-Overcharged High-dV/dt-Immunity Capacitive Level Shifter with Dynamic Discharge Control for Half-Bridge GaN Driver.
Proceedings of the IEEE International Symposium on Circuits and Systems, 2021