Zhaoji Li

Orcid: 0000-0003-2180-8562

According to our database1, Zhaoji Li authored at least 26 papers between 2006 and 2023.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

Legend:

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PhD thesis 
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Links

On csauthors.net:

Bibliography

2023
A 50-V 50-MHz High-Noise-Immunity Capacitive-Coupled Level Shifter With Digital Noise Blanker for GaN Drivers.
IEEE Trans. Circuits Syst. I Regul. Pap., May, 2023

A level shifter for high-side GaN drivers with enhanced d<i>V</i>/dt immunity and speed.
Microelectron. J., 2023

A physics-based compact model of shield gate trench MOSFET.
Microelectron. J., 2023

2022
A Novel Synchronous Rectification With Directly Frequency Tracking for Automotive Alternator.
IEEE Trans. Ind. Electron., 2022

A low gate charge field-plate trench MOSFET with hollow split gate structure.
Microelectron. J., 2022

Library Intelligent Book Return Robot Design.
Proceedings of the 4th International Conference on Robotics, 2022

2021
Design of an Isolated Circuit Breaker With Robust Interruption Capability for DC Microgrid Protection.
IEEE Trans. Ind. Electron., 2021

Mechanisms and characteristics of a low-loss split gate trench MOSFET with shield layer.
Microelectron. J., 2021

An Anti-Overcharged High-dV/dt-Immunity Capacitive Level Shifter with Dynamic Discharge Control for Half-Bridge GaN Driver.
Proceedings of the IEEE International Symposium on Circuits and Systems, 2021

2020
Embedded Hardware Artificial Neural Network Control for Global and Real-Time Imbalance Current Suppression of Parallel Connected IGBTs.
IEEE Trans. Ind. Electron., 2020

A Neural Network Assistance AMPPT Solar Energy Harvesting System With 89.39% Efficiency and 0.01-0.5% Tracking Errors.
IEEE Trans. Circuits Syst. I Regul. Pap., 2020

2019
A High Accuracy Weak Voltage LED Analog Dimming Method.
IEEE Access, 2019

2018
A Novel Virtual Sensing With Artificial Neural Network and K-Means Clustering for IGBT Current Measuring.
IEEE Trans. Ind. Electron., 2018

2015
Effect of field implantation on off- and on-state characteristics for thin layer SOI field P-channel LDMOS.
Proceedings of the 2015 IEEE 11th International Conference on ASIC, 2015

2014
A review of HVI technology.
Microelectron. Reliab., 2014

Bypass anode lateral IGBT on SOI for snapback suppression.
IEICE Electron. Express, 2014

2013
An Ultralow-Power Fast-Transient Capacitor-Free Low-Dropout Regulator With Assistant Push-Pull Output Stage.
IEEE Trans. Circuits Syst. II Express Briefs, 2013

ESD characterization of a 190V LIGBT SOI ESD power clamp structure for plasma display panel applications.
Microelectron. Reliab., 2013

Single capacitor with current amplifier compensation for ultra-large capacitive load three-stage amplifier.
Microelectron. J., 2013

Novel High voltage silicon-on-insulator Device with Composite dielectric buried Layer.
J. Circuits Syst. Comput., 2013

2012
Realizing high breakdown voltage for a novel interface charges islands structure based on partial-SOI substrate.
Microelectron. Reliab., 2012

2011
Research on periodic switching frequency modulation for conducted EMI suppressing in power converter.
Microelectron. J., 2011

2010
A novel spread-spectrum clock generator for suppressing conducted EMI in switching power supply.
Microelectron. J., 2010

2008
Self-tuning PSM controller based on state machine.
Proceedings of the IEEE Asia Pacific Conference on Circuits and Systems, 2008

2006
A new analytical model for optimizing SOI LDMOS with step doped drift region.
Microelectron. J., 2006

A novel double RESURF LDMOS and a versatile JFET device used as internal power supply and current detector for SPIC.
Microelectron. J., 2006


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