Aruna Kumari Neelam

According to our database, Aruna Kumari Neelam authored at least 7 papers between 2022 and 2025.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2025

Design and Analysis of Dual-k Spacer CombFET for Digital and Synaptic Applications.

N. Aruna Kumari, Srinivasa Rao Karumuri, J. Ajayan, Vikas Vijayvargiya, Abhishek Kumar Upadhyay, M. Uma, Aruru Sai Kumar

IEEE Access, 2025

Challenges and Advances in Materials and Fabrication Technologies for the Development of p-GaN Gated E-Mode AlGaN/GaN Power HEMTs: A Critical Review.

J. Ajayan, Vakkalakula Bharath Sreenivasulu, Aruna Kumari Neelam, S. Sreejith, Subhajit Das

IEEE Access, 2025

2024

Benchmarking of Multi-Bridge-Channel FETs Toward Analog and Mixed-Mode Circuit Applications.

V. Bharath Sreenivasulu, Aruna Kumari Neelam, Asisa Kumar Panigrahy, Lokesh Vakkalakula, Jawar Singh, Shiv Govind Singh

IEEE Access, 2024

Performance Comparison of Nanosheet FET, CombFET, and TreeFET: Device and Circuit Perspective.

Aruna Kumari Neelam, V. Bharath Sreenivasulu, Vikas Vijayvargiya, Abhishek Kumar Upadhyay, J. Ajayan, M. Uma

IEEE Access, 2024

2023

Investigation on effect of AlN barrier thickness and lateral scalability of Fe-doped recessed T-gate AlN/GaN/SiC HEMT with polarization-graded back barrier for future RF electronic applications.

B. Mounika, J. Ajayan, Sandip Bhattacharya, D. Nirmal, V. Bharath Sreenivasulu, N. Aruna Kumari

Microelectron. J., October, 2023

Exploring the Performance of 3-D Nanosheet FET in Inversion and Junctionless Modes: Device and Circuit-Level Analysis and Comparison.

V. Bharath Sreenivasulu, Aruna Kumari Neelam, Sekhar Reddy Kola, Jawar Singh, Yiming Li

IEEE Access, 2023

2022

Device and circuit-level performance comparison of GAA nanosheet FET with varied geometrical parameters.

N. Aruna Kumari, Pothupogu Prithvi

Microelectron. J., 2022