Asisa Kumar Panigrahy
Orcid: 0000-0002-9491-5310
According to our database1,
Asisa Kumar Panigrahy authored at least 16 papers
between 2024 and 2026.
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Bibliography
2026
Design and Modeling of a Dual-Nanogap Triple-Heterojunction Split-Gate T-Shaped Channel Vertical DMDG-TFET With Source Pockets for Biosensing.
IEEE Access, 2026
2025
Reliable TOA and TDOA Location Estimation Under Multipath Fading Channel Conditions in Wideband Wireless Networks for Indoor Factory Applications.
Wirel. Pers. Commun., September, 2025
Temperature-Driven Performance and Reliability Trade-Offs in 7 nm FinFET-Based Dynamic Comparators.
IET Circuits Devices Syst., 2025
A Low-Discrepancy and Latency-Aware, Scenario-Sensitive Resource Allocation Approach for Cloud Systems Using Latin Square-Based Improvised Genetic Optimization (LSBGO).
IEEE Access, 2025
A Low-Voltage Multistage Output Capacitor-Less LDO Using Dynamic Transient Enhancement Technique for SoC Applications.
IEEE Access, 2025
Chef-Based Optimization Algorithm (CBOA)-Based Global Peak Power Tracking Scheme for PV System.
IEEE Access, 2025
Toward Explainable AI in Satellite Imagery: A ResNet-50-Based Study on EuroSAT Classification.
IEEE Access, 2025
IEEE Access, 2025
Reliability Issues and Degradation Mechanisms of p-GaN Gated E-Mode AlGaN/GaN Power HEMTs: A Critical Review.
IEEE Access, 2025
2024
Benchmarking of Multi-Bridge-Channel FETs Toward Analog and Mixed-Mode Circuit Applications.
IEEE Access, 2024
An Organic Thin-Film Transistors (OTFTs) With Steep Subthreshold and Ultra-Low Temperature Solution Processing for Label-Free Biosensing.
IEEE Access, 2024
Corrections to "A Faster and Robust Artificial Neural Network Based Image Encryption Technique With Improved SSIM".
IEEE Access, 2024
A Faster and Robust Artificial Neural Network Based Image Encryption Technique With Improved SSIM.
IEEE Access, 2024
Spacer Dielectric Analysis of Multi-Channel Nanosheet FET for Nanoscale Applications.
IEEE Access, 2024
A Novel L<sub>G</sub> = 40 nm AlN-GDC-HEMT on SiC Wafer With f<sub>T</sub>/I<sub>DS,peak</sub> of 400 GHz/3.18 mA/mm for Future RF Power Amplifiers.
IEEE Access, 2024
Performance Improvement of Spacer-Engineered N-Type Tree Shaped NSFET Toward Advanced Technology Nodes.
IEEE Access, 2024