Ashok Ray

According to our database, Ashok Ray authored at least 7 papers between 2017 and 2026.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2026

Exploring the Resilience Nature of AlN Cap Layer in AlGaN/GaN HEMT Under Thermal Conditions.

Ellapu Bhanu Prakash, Ashok Ray, Sushanta Bordoloi

Proceedings of the 39th International Conference on VLSI Design & 25th International Conference on Embedded Systems, 2026

2024

Investigation of AlGaN/GaN HEMT Device Performance with Variation of GaN Cap Layer Thickness along with Doping Concentration.

Ellapu Bhanu Prakash, Vijay Maitra, Anil Prasad Dadi, Ashok Ray, Sushanta Bordoloi

Proceedings of the 15th International Conference on Computing Communication and Networking Technologies, 2024

2021

Introspection Into Reliability Aspects in AlGaN/GaN HEMTs With Gate Geometry Modification.

Sushanta Bordoloi, Ashok Ray, Gaurav Trivedi

IEEE Access, 2021

2019

Current Collapse Reduction Technique Using N-Doped Buffer Layer into the Bulk Region of a Gate Injection Transistor.

Koushik Bharadwaj, Ashok Ray, Sushanta Bordoloi, Gaurav Trivedi

Proceedings of the 32nd International Conference on VLSI Design and 18th International Conference on Embedded Systems, 2019

2017

FEM Based Device Simulator for High Voltage Devices.

Ashok Ray, Gaurav Kumar, Sushanta Bordoloi, Dheeraj Kumar Sinha, Pratima Agarwal, Gaurav Trivedi

Proceedings of the VLSI Design and Test - 21st International Symposium, 2017

Design and Simulation of SF-FinFET and SD-FinFET and Their Performance in Analog, RF and Digital Applications.

Syed Samsuz Zaman, Pankaj Kumar, Manash Pratim Sarma, Ashok Ray, Gaurav Trivedi

Proceedings of the IEEE International Symposium on Nanoelectronic and Information Systems, 2017

Basic CMOS Gate Design by Mixed-Mode Analysis of Step-Channel TMDG-MOSFET.

Pankaj Kumar, Syed Samsuz Zaman, Manash Pratim Sarma, Ashok Ray, Gaurav Trivedi

Proceedings of the IEEE International Symposium on Nanoelectronic and Information Systems, 2017