Ashraf A. Osman

According to our database, Ashraf A. Osman authored at least 5 papers between 1995 and 2004.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2004

Simulation of partially and near fully depleted SOI MOSFET devices and circuits using SPICE compatible physical subcircuit model.

Mohamed A. Imam, Mohamed A. Osman, Ashraf A. Osman

Microelectron. Reliab., 2004

2000

A simple subcircuit extension of the BSIM3v3 model for CMOS RF design.

Suet Fong Tin, Ashraf A. Osman, Kartikeya Mayaram, Chenming Hu

IEEE J. Solid State Circuits, 2000

1998

Comments on "A small-signal MOSFET model for radio frequency IC applications".

Suet Fong Tin, Ashraf A. Osman, Kartikeya Mayaram

IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1998

1996

MOSFET global modeling for deep submicron devices with a modified BSIM1 SPICE model.

Mohamed A. Imam, Mohamed A. Osman, Ashraf A. Osman

IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1996

1995

An extended Tanh law MOSFET model for high temperature circuit simulation.

Ashraf A. Osman, Mohamed A. Osman, Numan S. Dogan, Mohamed A. Imam

IEEE J. Solid State Circuits, February, 1995