Asit Ray

According to our database, Asit Ray authored at least 8 papers between 2003 and 2025.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2025

ADMET analysis and molecular docking of phytocompounds of <i>Magnolia champaca</i> leaf essential oil as potential inhibitors of α-Glucosidase, Estrogen Receptor-α, TNF-α, and Xanthine Oxidase.

Chiranjibi Sahoo, Ananya Nayak, Ayushman Gadnayak, Sudipta Jena, Asit Ray, Pratap Chandra Panda, Sanghamitra Nayak, Ambika Sahoo

Int. J. Comput. Biol. Drug Des., 2025

Computer-aided screening of phytoconstituents from Plumeria species targeting xanthine oxidase inhibition: a combination of pharmacokinetics, molecular docking and molecular dynamics approaches.

Geetashree Gyanadarshinee Sahoo, Ananya Nayak, Ayushman Gadnayak, Biswabhusan Dash, Sudipta Jena, Asit Ray, Pratap Chandra Panda, Sanghamitra Nayak, Ambika Sahoo

Comput. Biol. Chem., 2025

2004

A 4-91-GHz traveling-wave amplifier in a standard 0.12-μm SOI CMOS microprocessor technology.

Jean-Olivier Plouchart, Jonghae Kim, Noah Zamdmer, Liang-Hung Lu, Melanie Sherony, Yue Tan, Robert A. Groves, Robert Trzcinski, Mohamed Talbi, Asit Ray, Lawrence F. Wagner

IEEE J. Solid State Circuits, 2004

2003

Application of an SOI 0.12-µm CMOS technology to SoCs with low-power and high-frequency circuits.

Jean-Olivier Plouchart, Noah Zamdmer, Jonghae Kim, Melanie Sherony, Yue Tan, Asit Ray, Mohamed Talbi, Lawrence F. Wagner, Kun Wu, Naftali E. Lustig, Shreesh Narasimha, Patricia O'Neil, Nghia Phan, Michael Rohn, James Strom, David M. Friend, Stephen V. Kosonocky, Daniel R. Knebel, Suhwan Kim, Keith A. Jenkins, Michel M. Rivier

IBM J. Res. Dev., 2003

A 0.123 mW 7.25 GHz static frequency divider by 8 in a 120-nm SOI technology.

Jean-Olivier Plouchart, Jonghae Kim, Hector Recoules, Noah Zamdmer, Yue Tan, Melanie Sherony, Asit Ray, Lawrence F. Wagner

Proceedings of the 2003 International Symposium on Low Power Electronics and Design, 2003

A power-optimized widely-tunable 5-GHz monolithic VCO in a digital SOI CMOS technology on high resistivity substrate.

Jonghae Kim, Jean-Olivier Plouchart, Noah Zamdmer, Melanie Sherony, Yue Tan, Meeyoung Yoon, Robert Trzcinski, Mohamed Talbi, John Safran, Asit Ray, Lawrence F. Wagner

Proceedings of the 2003 International Symposium on Low Power Electronics and Design, 2003

A 31 GHz CML ring VCO with 5.4 ps delay in a 0.12-μm SOI CMOS technology.

Jean-Olivier Plouchart, Jonghae Kim, Noah Zamdmer, Melanie Sherony, Yue Tan, Meeyoung Yoon, Mohamed Talbi, Asit Ray, Lawrence F. Wagner

Proceedings of the ESSCIRC 2003, 2003

A 4-91 GHz distributed amplifier in a standard 0.12 μm SOI CMOS microprocessor technology.

Jean-Olivier Plouchart, Jonghae Kim, Noah Zamdmer, Liang-Hung Lu, Melanie Sherony, Yue Tan, Robert A. Groves, Robert Trzcinski, Mohamed Talbi, Asit Ray, Lawrence F. Wagner

Proceedings of the IEEE Custom Integrated Circuits Conference, 2003