Bart Keppens

According to our database, Bart Keppens authored at least 7 papers between 2001 and 2007.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2007

SCR-based ESD protection in nanometer SOI technologies.

Olivier Marichal, Geert Wybo, Benjamin Van Camp, Pieter Vanysacker, Bart Keppens

Microelectron. Reliab., 2007

2006

ESD protection solutions for high voltage technologies.

Bart Keppens, Markus P. J. Mergens, Cong Son Trinh, Christian C. Russ, Benjamin Van Camp, Koen G. Verhaege

Microelectron. Reliab., 2006

2005

ESD protection circuit design for ultra-sensitive IO applications in advanced sub-90nm CMOS technologies.

Markus P. J. Mergens, Geert Wybo, Bart Keppens, Benjamin Van Camp, Frederic De Ranter, Koen G. Verhaege, John Armer, Phillip Jozwiak, Christian C. Russ

Proceedings of the International Symposium on Circuits and Systems (ISCAS 2005), 2005

2004

Active-source-pump (ASP) technique for ESD design window expansion and ultra-thin gate oxide protection in sub-90nm technologies.

Markus P. J. Mergens, John Armer, Phillip Jozwiak, Bart Keppens, Frederic De Ranter, Koen G. Verhaege, R. Kumar

Proceedings of the IEEE 2004 Custom Integrated Circuits Conference, 2004

2003

Multi-finger turn-on circuits and design techniques for enhanced ESD performance and width scaling.

S. Trinh, Markus P. J. Mergens, Koen G. Verhaege, Christian C. Russ, John Armer, Phillip Jozwiak, Bart Keppens, Russ Mohn, G. Taylor, Frederic De Ranter

Microelectron. Reliab., 2003

2002

Significance of the failure criterion on transmission line pulse testing.

Bart Keppens, Vincent De Heyn, M. Natarajan Iyer, Vesselin K. Vassilev, Guido Groeseneken

Microelectron. Reliab., 2002

2001

Influence of gate length on ESD-performance for deep submicron CMOS technology.

Karlheinz Bock, Bart Keppens, Vincent De Heyn, Guido Groeseneken, L. Y. Ching, A. Naem

Microelectron. Reliab., 2001