Byoungdeog Choi

According to our database, Byoungdeog Choi authored at least 7 papers between 2012 and 2025.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2025

Suppression of Capacitor Leakage Through Thermal Budget Control in DRAM With ZrO₂-Based Dielectrics.

Dong-Sik Park, Eun-Ok Lee, Jong-Min Lee, Eunae Cho, Byoungdeog Choi

IEEE Access, 2025

2024

String-level compact modeling of erase operations in the body-floated vertical channel of 3D charge trapping flash memory.

Sunghwan Cho, Byoungdeog Choi

Microelectron. J., 2024

Novel STI Technology for Enhancing Reliability of High-k/Metal Gate DRAM.

Hyojin Park, Gyuhyun Kil, Wonju Sung, Junghoon Han, Jungwoo Song, Byoungdeog Choi

IEEE Access, 2024

Novel Dual Work Function Buried Channel Array Transistor Process Design for Sub-17 nm DRAM.

Dong-Sik Park, Dong-Hyun Im, Yun-Jung Kim, Sung Sam Lee, Byung-Jae Kang, Jae-Hong Seo, Taewoong Koo, Byoungdeog Choi

IEEE Access, 2024

2017

Novel Method for Nondestructive Body Effect Measurement in Dynamic Random Access Memory.

Il-Woo Jung, Bonggu Sung, Byoungdeog Choi

J. Electron. Test., 2017

2012

The effect of gate overlap lightly doped drains on low temperature poly-Si thin film transistors.

Jaehyun Cho, Sungwook Jung, Kyungsoo Jang, Hyungsik Park, Jongkyu Heo, Wonbaek Lee, DaeYoung Gong, Seungman Park, Hyungwook Choi, Hanwook Jung, Byoungdeog Choi, Junsin Yi

Microelectron. Reliab., 2012

Current-voltage characteristics of vertical diodes for next generation memories.

Hokyun An, Kong-Soo Lee, Yoongoo Kang, Seonghoon Jeong, Wonseok Yoo, Jae-Jong Han, Bonghyun Kim, Hanjin Lim, Seokwoo Nam, Gi-Tae Jeong, Ho-Kyu Kang, Chilhee Chung, Byoungdeog Choi

Proceedings of the 2012 European Solid-State Device Research Conference, 2012