Gitae Jeong

According to our database1, Gitae Jeong authored at least 16 papers between 2002 and 2023.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

Legend:

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PhD thesis 
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Links

On csauthors.net:

Bibliography

2023
Highly Reliable/Manufacturable 4nm FinFET Platform Technology (SF4X) for HPC Application with Dual-CPP/HP-HD Standard Cells.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

World's First GAA 3nm Foundry platform Technology (SF3) with Novel Multi-Bridge-Channel-FET (MBCFET™) Process.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

2021
Reliability of STT-MRAM for various embedded applications.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

2019
Reliability of 8Mbit Embedded-STT-MRAM in 28nm FDSOI Technology.
Proceedings of the IEEE International Reliability Physics Symposium, 2019

2013
What Lies Ahead for Resistance-Based Memory Technologies?
Computer, 2013

2012

Current-voltage characteristics of vertical diodes for next generation memories.
Proceedings of the 2012 European Solid-State Device Research Conference, 2012

2011
Current status and future prospect of Phase Change Memory.
Proceedings of the 2011 IEEE 9th International Conference on ASIC, 2011

2008
A 90 nm 1.8 V 512 Mb Diode-Switch PRAM With 266 MB/s Read Throughput.
IEEE J. Solid State Circuits, 2008

2007
A 0.1-µm 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation.
IEEE J. Solid State Circuits, 2007


2006
Enhanced write performance of a 64-mb phase-change random access memory.
IEEE J. Solid State Circuits, 2006

2005
A 0.18-μm 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM).
IEEE J. Solid State Circuits, 2005

Emerging memory technologies.
Proceedings of the IEEE 2005 Custom Integrated Circuits Conference, 2005

2003
A 0.24-μm 2.0-V 1T1MTJ 16-kb nonvolatile magnetoresistance RAM with self-reference sensing scheme.
IEEE J. Solid State Circuits, 2003

2002
DRAM reliability.
Microelectron. Reliab., 2002


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