D. S. Huang

According to our database, D. S. Huang authored at least 4 papers between 2018 and 2022.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2022

AC TDDB Analysis for HK/IL Gate Stack Breakdown and Frequency-dependent Oxygen Vacancy Trap Generation in Advanced nodes FinFET Devices by SILC Spectrum Methodology.

P. S. Chen, Y. W. Lee, D. S. Huang, S. C. Chen, C. F. Cheng, J. H. Lee, Jun He

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2018

Study of dynamic TDDB in scaled FinFET technologies.

Kaustubh Joshi, Shu-Wen Chang, D. S. Huang, P. J. Liao, Yung-Huei Lee

Proceedings of the IEEE International Reliability Physics Symposium, 2018

Comprehensive device and product level reliability studies on advanced CMOS technologies featuring 7nm high-k metal gate FinFET transistors.

D. S. Huang, J. H. Lee, Y. S. Tsai, Y. F. Wang, Y. S. Huang, C. K. Lin, Ryan Lu, Jun He

Proceedings of the IEEE International Reliability Physics Symposium, 2018

The physical mechanism investigation of off-state drain bias TDDB and its implication in advance HK/MG FinFETs.

I. K. Chen, S. C. Chen, S. Mukhopadhyay, D. S. Huang, J. H. Lee, Y. S. Tsai, Ryan Lu, Jun He

Proceedings of the IEEE International Reliability Physics Symposium, 2018