Daniel Schwarz
Orcid: 0000-0003-2702-4697Affiliations:
- University of Stuttgart, Stuttgart, Germany
According to our database1,
Daniel Schwarz
authored at least 15 papers
between 2018 and 2022.
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Bibliography
2022
Proceedings of the 48th IEEE European Solid State Circuits Conference, 2022
Electroluminescence of Si<sub>x</sub>Ge<sub>1-x-y</sub>Sn<sub>y</sub>/Ge<sub>1-y</sub>Sn<sub>y</sub> pin-Diodes Grown on a GeSn Buffer.
Proceedings of the 48th IEEE European Solid State Circuits Conference, 2022
2021
Formation of Mn5Ge3 on a Recess-Etched Ge (111) Quantum-Well Structure for Semiconductor Spintronics.
Proceedings of the 44th International Convention on Information, 2021
Strained Ge Channels with High Hole Mobility Grown on Si Substrates by Molecular Beam Epitaxy.
Proceedings of the 44th International Convention on Information, 2021
Proceedings of the 44th International Convention on Information, 2021
MBE-Grown Ge0.92Sn0.08 Diode on RPCVD-Grown Partially Relaxed Virtual Ge0.92Sn0.08 Substrate.
Proceedings of the 44th International Convention on Information, 2021
Characterization of Fe Micromagnets for Semiconductor Spintronics by In-Field Magnetic Force Microscopy.
Proceedings of the 44th International Convention on Information, 2021
2020
Proceedings of the 43rd International Convention on Information, 2020
Proceedings of the 43rd International Convention on Information, 2020
2019
Proceedings of the 42nd International Convention on Information and Communication Technology, 2019
Electrical Characterization of Fabricated pin Diodes made from SixGe1-x-ySny with an Embedded Ge1-xSnx Quantum Well.
Proceedings of the 42nd International Convention on Information and Communication Technology, 2019
Proceedings of the 42nd International Convention on Information and Communication Technology, 2019
Electrical Characterization of Low-Temperature Boron on Silicon Deposition utilizing Molecular Beam Epitaxy.
Proceedings of the 42nd International Convention on Information and Communication Technology, 2019
2018
Performance of C6H8O7-treated and H- and Cl-passivated Ge-MOS-capacitances on Ge-virtual-substrate on Si(001).
Proceedings of the 41st International Convention on Information and Communication Technology, 2018
Optical characterization of highly n-type doped Ge0.95Sn0.05 rod antennas on Si(001) substrates.
Proceedings of the 41st International Convention on Information and Communication Technology, 2018