Michael Oehme

According to our database, Michael Oehme authored at least 12 papers between 2016 and 2022.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2022

GeSn-on-Si Avalanche Photodiodes for Short-Wave Infrared Detection.

Maurice Wanitzek, Michael Oehme, Christian Spieth, Daniel Schwarz, Lukas Seidel, Jörg Schulze

Proceedings of the 48th IEEE European Solid State Circuits Conference, 2022

Electroluminescence of Si_xGe_1-x-ySn_y/Ge_1-ySn_y pin-Diodes Grown on a GeSn Buffer.

Lukas Seidel, Sören Schäfer, Michael Oehme, Dan Buca, Giovanni Capellini, Jörg Schulze, Daniel Schwarz

Proceedings of the 48th IEEE European Solid State Circuits Conference, 2022

2021

Formation of Mn5Ge3 on a Recess-Etched Ge (111) Quantum-Well Structure for Semiconductor Spintronics.

David Weißhaupt, Hannes S. Funk, Christoph Sürgers, Gerda Fischer, Michael Oehme, Daniel Schwarz, Inga A. Fischer, Joris van Slageren, Jörg Schulze

Proceedings of the 44th International Convention on Information, 2021

Strained Ge Channels with High Hole Mobility Grown on Si Substrates by Molecular Beam Epitaxy.

E. Sigle, David Weißhaupt, Michael Oehme, Hannes S. Funk, Daniel Schwarz, Fritz Berkmann, Jörg Schulze

Proceedings of the 44th International Convention on Information, 2021

Electrical Characterization of SiGeSn/Ge/GeSn-pin-Heterodiodes at Low Temperatures.

Lukas Seidel, Daniel Schwarz, Michael Oehme, A. Causevic, Hannes S. Funk, David Weißhaupt, Fritz Berkmann, Jörg Schulze

Proceedings of the 44th International Convention on Information, 2021

MBE-Grown Ge0.92Sn0.08 Diode on RPCVD-Grown Partially Relaxed Virtual Ge0.92Sn0.08 Substrate.

Daniel Schwarz, Sören Schäfer, Lukas Seidel, Hannes S. Funk, David Weißhaupt, Michael Oehme, V. Schlykow, V. Kiyek, Dan Buca, Jörg Schulze

Proceedings of the 44th International Convention on Information, 2021

2020

Ge-on-Si Avalanche Photodiodes for LIDAR Applications.

Maurice Wanitzek, Michael Oehme, Daniel Schwarz, K. Guguieva, Jörg Schulze

Proceedings of the 43rd International Convention on Information, 2020

Carrier mobilities in heavily doped pseudomorphic Ge1-x Snx-epilayers.

Marco M. Dettling, David Weißhaupt, Hannes S. Funk, Michal Kern, Fritz Berkmann, Caterina J. Clausen, Michael Oehme, Daniel Schwarz, Joris van Slageren, Jörg Schulze

Proceedings of the 43rd International Convention on Information, 2020

2019

Electrical Characterization of Fabricated pin Diodes made from SixGe1-x-ySny with an Embedded Ge1-xSnx Quantum Well.

P. Povolni, Daniel Schwarz, Caterina J. Clausen, Yasmine Elogail, Hannes S. Funk, Michael Oehme, David Weißhaupt, Jörg Schulze

Proceedings of the 42nd International Convention on Information and Communication Technology, 2019

A 2x2 Pixel Array Camera based on a Backside Illuminated Ge-on-Si Photodetector.

Ann-Christin Köllner, Zili Yu, Michael Oehme, Jens Anders, Mathias Kaschel, Jörg Schulze, Joachim N. Burghartz

Proceedings of the 2019 IEEE SENSORS, Montreal, QC, Canada, October 27-30, 2019, 2019

2018

Optical characterization of highly n-type doped Ge0.95Sn0.05 rod antennas on Si(001) substrates.

Fritz Berkmann, Lion Augel, M. B. Schilling, Audrey Berrier, Daniel Schwarz, David Weißhaupt, Michael Oehme, Jörg Schulze, Inga A. Fischer

Proceedings of the 41st International Convention on Information and Communication Technology, 2018

2016

Small-signal IMPATT diode characterization for mm-wave power generation in monolithic scenarios.

Wogong Zhang, Michael Oehme, Klaus Matthies, Viktor Stefani, Ashraful I. Raju, Erich Kasper, Jörg Schulze

Proceedings of the 46th European Solid-State Device Research Conference, 2016